features high performance C 1150 w superior sic substrate technology 465 nm dominant wavelength excellent chip-to-chip consistency high reliability ? ? ? ? ? applications full-color displays & moving message signs solid-state incandescent replacement bulbs high ambient panel indicators color printers & scanners medical & analytical instruments ? ? ? ? ? superblue? leds c430cb290-s000 crees superblue leds combine highly effcient gan with crees proprietary g?sic? substrate to deliver the ultimate price/performance for high-intensity blue leds. the C430CB290-S0100 is designed for use in high ambient-light conditions with a typical output of 1150 w and a 465 nm dominant wavelength (at 20 ma). crees cb series chips are sorted onto tape and compatible with most radial and smt led assembly processes. c430cb290-s000 chip diagram top view bottom view g?sic led chip 275 x 275 m sic substrate t = 250 m backside metallization gold bond pad 115 m diameter die cross section cathode (-) anode (+) mesa (junction) 246 x 246 m d a t a s h e e t : c p r 3 l , r e v . m subject to change without notice. www.cree.com
copyright ? 1998-2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo and g?sic are registered trademarks, and superblue is a trademark of cree, inc. 2 cpr3l rev. m cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com maximum ratings at t a = 25c notes &3 c430cb290-s000 dc forward current 30 ma peak forward current (1/10 duty cycle @ 1khz) 70 ma led junction temperature 125c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +100c electrostatic discharge threshold (hbm) note 2 1000 v electrostatic discharge classifcation (mil-std-883e) note 2 class 2 typical electrical/optical characteristics at t a = 25c, if = 20 ma note 3 part number forward voltage (v f , v) radiant flux (p, w) reverse current [i(vr=5v), a] flux (mlm) peak wavelength ( d , nm) dominant wavelength ( d , nm) full width half max ( d , nm) typ. max. min. typ. max. typ. typ. min. typ. max. typ. C430CB290-S0100 4.0 4.5 850 1150 10 65 428 462 465 466 60 mechanical specifcations c430cb290-s000 description dimension tolerance p-n junction area (m) 246 x 246 25 top area (m) 275 x 275 25 bottom area (m) 275 x 275 25 chip thickness (m) 250 25 au bond pad diameter (m) 115 20 au bond pad thickness (m) 1.2 0.5 back contact metal area (m) 20 -5, +10t notes: maximum ratings are package dependent. the above ratings were determined using a t-1 3/4 package (with hysol os4000 epoxy) for characterization. ratings for other packages may differ. the forward currents (dc and peak) are not limited by the die but by the effect of the led junction temperature on the package. the junction temperature limit of 125c is a limit of the t-1 3/4 package; junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (<5 seconds). product resistance to electrostatic discharge (esd) according to the hbm is measured by simulating esd using a rapid avalanche energy test (raet). the raet procedures are designed to approximate the maximum esd ratings shown. the raet procedure is performed on each die. the esd classifcation of class 2 is based on sample testing according to mil -std-883e. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 20 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. all measurements were made using lamps in t-1 3/4 packages (with hysol os4000 epoxy). optical characteristics measured in an integrating sphere using illuminance a. specifcations are subject to change without notice. 1. 2. 3. 4.
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